summary v (br)dss = 30v; r ds(on) = 0.12 i d = 2.0a description this new generation of trench mosfets from ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? sot23 package applications ? dc - dc converters ? power management functions ? motor control device marking ? 7n3 zxmn3a01f 30v n-channel enhancement mode mosfet device reel size tape width quantity per reel ZXMN3A01FTA 7? 8mm 3000 units zxmn3a01ftc 13? 8mm 10000 units ordering information top view pinout sot23 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
zxmn3a01f parameter symbol v alue unit junction to ambient (a) r ja 200 c/w junction to ambient (b) r ja 155 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 5 secs. (c) repetitive rating 25mm x 25mm fr4 pcb, d = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. thermal resistance parameter symbol limit unit drain-source voltage v dss 30 v gate source voltage v gs 20 v continuous drain current v gs =10v; t a =25c (b) v gs =10v; t a =70c (b) v gs =10v; t a =25c (a) i d 2.0 1.6 1.8 a pulsed drain current (c) i dm 8a continuous source current (body diode) (b) i s 1.3 a pulsed source current (body diode) (c) i sm 8a power dissipation at t a =25c (a) linear derating factor p d 625 5 mw mw/c power dissipation at t a =25c (b) linear derating factor p d 806 6.4 mw mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings. product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
zxmn3a01f parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss 30 v i d =250 a, v gs =0v zero gate voltage drain current i dss 0.5 a v ds =30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.106 0.12 0.18 ? ? v gs =10v, i d =2.5a v gs =4.5v, i d =2.0a forward transconductance (1)(3) g fs 3.5 s v ds =4.5v,i d =2.5a dynamic (3) input capacitance c iss 190 pf v ds =25v,v gs =0v, f=1mhz output capacitance c oss 38 pf reverse transfer capacitance c rss 20 pf switching (2) (3) turn-on delay time t d(on) 1.7 ns v dd =15v, i d =2.5a r g @ 6.0 ? ,v gs =10v rise time t r 2.3 ns turn-off delay time t d(off) 6.6 ns fall time t f 2.9 ns gate charge q g 2.3 nc v ds =15v,v gs =5v, i d =2.5a total gate charge q g 3.9 nc v ds =15v,v gs =10v, i d =2.5a gate-source charge q gs 0.6 nc gate-drain charge q gd 0.9 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s =1.7a, v gs =0v reverse recovery time (3) t rr 17.7 ns t j =25c, i f =2.5a, di/dt= 100a/ s reverse recovery charge (3) q rr 13.0 nc electrical characteristics (at t a = 25c unless otherwise stated). notes (1) measured under pulsed conditions. width = 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing. product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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